Influence of nanocrystals on resistive switching characteristic in binary metal oxides memory devices

Electrochemical and Solid-State Letters

Volumn 14, Issue 3, 2011, Pages

  Tsai, Yu Ting ^a   Chang, Ting Chang ^b   Lin, Chao Cheng ^c   Chen, Shih Cheng ^d   Chen, Chi Wen ^b   Sze, Simon M ^a   Yeh, Fon Shan ^d   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY METAL OXIDES; CONVENTIONAL MEMORIES; MEMORY DEVICE; METAL NANOCRYSTALS; NON-VOLATILE MEMORY APPLICATION; READING ERRORS; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SET VOLTAGE; SWITCHING ERRORS; SWITCHING PARAMETERS; SWITCHING PERFORMANCE;

METALLIC COMPOUNDS; METALS; NANOCRYSTALS; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

SWITCHING;

EID: 78951482667     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3531843     Document Type: Article

References (21)

1. M. J. Lee, S. Han, S. H. Jeon, B. H. Park, B. S. Kang, S. E. Ahn, K. H. Kim, J. H. Lee, and Y. Park, Nano Lett., 9, 14761481 (2009).
2. C. Yoshida, K. Kinoshita, T. Yamasaki, and Y. Sugiyama, Appl. Phys. Lett., 93, 042106 (2008). 10.1063/1.2966141
3. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature (London), 453, 80 (2008). 10.1038/nature06932
4. K. Fujiwara, T. Nemoto, M. J. Rozenberg, Y. Nakamura, and H. J. Takagi, Jpn. Appl. Phys., 47, 6266 (2008). 10.1143/JJAP.47.6266
5. Q. Liu, W. Guan, S. Long, M. Liu, S. Zhang, Q. Wang, and J. Xhen, J. Appl. Phys., 104, 114514 (2008). 10.1063/1.3033561
6. I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, Tech. Dig.-Int. Electron Devices Meet., 2005, 203.
7. W. Guan, S. Long, R. Jia, and M. Liu, Appl. Phys. Lett., 91, 062111 (2007). 10.1063/1.2760156
8. W. Y. Chang, K. J. Cheng, J. M. Tsai, H. J. Chen, F. Chen, M. J. Tsai, and T. B. Wu, Appl. Phys. Lett., 95, 042104 (2009). 10.1063/1.3193656
9. Q. Liu, S. Long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, and M. Liu, ACS Nano, 4, 6162 (2010). 10.1021/nn1017582
10. J. C. Klein and D. M. Hercules, J. Catal., 82, 424 (1983). 10.1016/0021-9517(83)90209-9
11. N. W. Cheung, P. J. Grunthaner, F. J. Grunthaner, J. W. Mayer, and B. M. Ullrich, J. Vac. Sci. Technol., 18, 917 (1981). 10.1116/1.570994
12. F. U. Hillebrecht, J. C. Fuggle, P. A. Bennett, and Z. Zolnierek, Phys. Rev. B, 27, 2179 (1982). 10.1103/PhysRevB.27.2179
13. W. A. M. Aarnik, A. Weishaupt, and A. van Silfout, Appl. Surf. Sci., 45, 37 (1990). 10.1016/0169-4332(90)90018-U
14. P. J. Grunthaner, F. J. Grunthaner, and A. Madhukar, J. Vac. Sci. Technol., 20, 680 (1982). 10.1116/1.571627
15. H. D. Young, S. K. June, P. H. Jin, H. J. Kyooho, and I. Hyunsik, J. Appl. Phys., 104, 114512 (2008). 10.1063/1.3032896
16. C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, C. Hu, and T.-Y. Tseng, J. Electrochem. Soc., 154, G189 (2007). 10.1149/1.2750450
17. G. Ludovic, G. L. Judit, P. W. Xin, J. Malgorzata, and J. W. Dirk, IEEE Trans. Electron Devices, 56, 2363 (2009). 10.1109/TED.2009.2028378
18. C. Cagli, D. Ielmini, F. Nardi, and A. L. Lacaita, Tech. Dig.-Int. Electron Devices Meet., 2008, 1.
19. D. Ielmini, C. Cagli, and F. Nardi, Appl. Phys. Lett., 94, 063511 (2009). 10.1063/1.3081401
20. H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, Tech. Dig.-Int. Electron Devices Meet., 2008, 297.
21. M. Liu, Z. Abid, W. Wang, X. He, Q. Liu, and W. Guan, Appl. Phys. Lett., 94, 233106 (2009). 10.1063/1.3151822