Atomic layer deposition of ZrO2 thin films with high dielectric constant on TiN substrates

Electrochemical and Solid-State Letters

Volumn 11, Issue 3, 2008, Pages

  Kim, Seong Keun ^a,c   Hwang, Cheol Seong ^a,b  

^a Seoul National University   (South Korea)

^b ELECTROCHEMICAL SOCIETY

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; INTERFACIAL ENERGY; METASTABLE PHASES; PERMITTIVITY; TITANIUM DIOXIDE; ZIRCONIUM COMPOUNDS;

GROWTH CONTROLLED SELECTION; HIGH DIELECTRIC CONSTANT; HIGH TEMPERATURE CRYSTALLINE FORM; HIGH TEMPERATURE FORM;

THIN FILMS;

EID: 38349164491     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2825763     Document Type: Article

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