Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

Applied Physics Letters

Volumn 77, Issue 20, 2000, Pages 3269-3271

  Qi, Wen Jie ^a   Nieh, Renee ^a   Lee, Byoung Hun ^a   Kang, Laegu ^a   Jeon, Yongjoo ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000024537     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1326482     Document Type: Article

References (22)

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