Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 157-160

  Shang, Hulling ^a   Chu, Jack O ^a   Bedell, Stephen ^a   Gusev, Evgeni P ^a   Jamison, Paul ^b   Zhang, Ying ^a   Ott, John A ^a   Copel, Matthew ^a   Sadana, Devendra ^a   Guarini, Kathryn W ^a   Ieong, Meikei ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Systems and Technology Group   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACK FORMATION; PLASMA OXIDATION; SHALLOW TRENCH ISOLATION (STI); THERMAL MIXING (TM); GERMANIUMS (GE); HIGH MOBILITY; HIGH-PERFORMANCE CMOS; LOWS-TEMPERATURES; PMOSFET'S; REMOTE PLASMAS; SIGE ON INSULATOR; STRAINED-GE; THERMAL MIXING; TRENCH ISOLATION;

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HOLE MOBILITY; OXIDATION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; MOSFET DEVICES; SI-GE ALLOYS; SILICON; TEMPERATURE;

MOSFET DEVICES; SILICA;

EID: 21644463455     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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