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Volumn 12, Issue 12, 2009, Pages

Implantation, diffusion, activation, and recrystallization of gallium implanted in preamorphized and crystalline germanium

(9) Hellings, Geert a,b Wuendisch, Clemens c Eneman, Geert a,b Simoen, Eddy b Clarysse, Trudo b Meuris, Marc b Vandervorst, Wilfried a,b Posselt, Matthias c De Meyer, Kristin a,b

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE GE; CRYSTALLINE GERMANIUM; DIFFUSIVITIES; ELECTRICAL ACTIVATION; HIGH-ACTIVATION; LOW ACTIVATION; PRE-AMORPHIZATION; RECRYSTALLIZATIONS; SHEET RESISTANCE MEASUREMENTS;

CRYSTALLINE MATERIALS; DIFFUSION; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; MASS SPECTROMETRY; RECRYSTALLIZATION (METALLURGY); TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 70350070740 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3225204 Document Type: Article

Times cited : (27)

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