High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 185-188

  Yu, W ^a,b   Zhang, B ^a,b   Zhao, Q T ^a   Hartmann, J M ^c   Buca, D ^a   Nichau, A ^a   Luptak R ^a   Lopes, J M ^a   Lenk, S ^a   Luysberg, M ^a   Bourdelle, K K ^d   Wang, X ^b   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c CEA LETI   (France)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

HfO2; High k; Hole mobility; LaLuO3; Quantum well MOSFET; SiGe

Indexed keywords

HFO2; HIGH-K; LALUO3; QUANTUM WELL MOSFET; SIGE;

DIELECTRIC DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM OXIDES; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON ALLOYS;

MOSFET DEVICES;

EID: 79957947974     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.03.002     Document Type: Article

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