Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Vincent, B ^a   Gencarelli, F ^a   Bender, H ^a,d   Merckling, C ^a   Douhard, B ^a   Petersen, D H ^b   Hansen, O ^b   Henrichsen, H H ^c   Meersschaut, J ^a   Vandervorst, W ^a   Heyns, M ^a   Loo, R ^a,b   Caymax, M ^a  

^a IMEC   (Belgium)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c Capres AS   (Denmark)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT-FREE; GE SUBSTRATES; IN-SITU; METASTABLE LAYERS; MOBILITY VALUE; P-TYPE; VAPOR-DEPOSITION TECHNIQUES;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE MOBILITY; TIN;

GERMANIUM;

EID: 80054985557     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3645620     Document Type: Article

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