Low-frequency noise characterization of strained germanium pMOSFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 3132-3139

  Simoen, E ^a   Mitard, Jérôme ^a   De Jaeger, B ^a   Eneman, G ^a,b,c   Dobbie, Andy ^d   Myronov, Maksym ^d   Whall, Terence E ^d   Leadley, David R ^d   Meuris, Marc ^a   Hoffmann, T ^a   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^d UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Generation recombination (GR) noise; hole mobility; low frequency (LF) noise; strained and relaxed germanium

Indexed keywords

1/F NOISE; COMPRESSIVE STRAIN; DEVICE CHARACTERISTICS; FRONT-END PROCESSING; GATE OXIDE; GATE STACKS; GENERATION-RECOMBINATION; HALO IMPLANTATION; HIGH DENSITY; IMPLANTATION DAMAGE; LOW-FREQUENCY NOISE; NOISE SPECTRAL DENSITY; NUMBER FLUCTUATIONS; P-MOSFETS; RELAXED SIGE; STRAINED AND RELAXED GERMANIUM; STRAINED-GE; STRONG INVERSION;

GATE DIELECTRICS; GERMANIUM; SPECTRAL DENSITY; THERMAL NOISE;

HOLE MOBILITY;

EID: 80052098884     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2160679     Document Type: Article

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