High-mobility Si1-xGex-channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 41-42

  Eneman, G ^a,b,c   Yamaguchi, S ^d   Ortolland, C ^a   Takeoka, S ^a   Witters, L ^a   Chiarella, T ^a   Favia, P ^a   Hikavyy, A ^a   Mitard, J ^a   Kobayashi, M ^a,e   Krom, R ^a,b   Bender, H ^a   Tseng, J ^a,f   Wang, W E ^a   Vandervorst, W ^a,b   Loo, R ^a   Absil, P P ^a   Biesemans, S ^a   Hoffmann, T ^a  

^a Imec ^*  (Japan)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^d SONY CORPORATION   (Japan)

^e STANFORD UNIVERSITY   (United States)

^f TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPREHENSIVE STUDIES; DRIVE CURRENT ENHANCEMENT; HIGH MOBILITY; IN-CHANNELS; LINEAR CURRENTS; NANOBEAM DIFFRACTION; NARROW WIDTH; TRANSISTOR WIDTH;

GERMANIUM;

SILICON;

EID: 77957880114     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556128     Document Type: Conference Paper

References (6)

1. Takeda et al., VLSI Symp, pp. 20 (2009).
2. Mahji et al., EDL 29, pp. 99, (2008).
3. Jakschik et al, VLSI-TSA, pp.30 (2007).
4. Taurus-Process (Synopsys), version Z-2007.03.
5. Pan, et al., IEDM (2006).
6. Usuda, et al. Mat. Sci. Semicond. Proc. 8, pp.155 (2005).