Band structure, deformation potentials, and carrier mobility in strained Si Ge, and SiGe alloys

Journal of Applied Physics

Volumn 80, Issue 4, 1996, Pages 2234-2252

  Fischetti, M V ^a   Laux, S E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001038893     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363052     Document Type: Article

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