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Volumn 99, Issue 14, 2011, Pages

Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

(5) Suh, Junkyo a Nakane, Ryosho a Taoka, Noriyuki a Takenaka, Mitsuru a Takagi, Shinichi a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; EXPERIMENTAL DATA; GE CONDENSATION; GE CONTENT; HIGH MOBILITY; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ENHANCEMENT; P-MOSFETS; SIGE ON INSULATOR; SOI SUBSTRATES; STRAINED-SOI; THEORETICAL CALCULATIONS;

CONDENSATION; DIELECTRIC DEVICES; GERMANIUM; HOLE CONCENTRATION; HOLE MOBILITY; LATTICE MISMATCH; MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON ALLOYS; SILICON ON INSULATOR TECHNOLOGY; STRAIN RELAXATION; SUBSTRATES; TENSILE STRAIN; TRANSISTORS;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 80054008354 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3647631 Document Type: Article

Times cited : (28)

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