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Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates

(8) Wang, G a,b Rosseel, E a Loo, R a Favia, P a Bender, H a Caymax, M a Heyns, M M a,b Vandervorst, W a,c

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

c KU LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL WIDTHS; CRYSTALLINE QUALITY; DIFFUSION ACTIVATION ENERGY; HIGH GROWTH TEMPERATURES; IN-CHANNELS; LASER ANNEAL; LOW TEMPERATURE GROWTH; LOW TEMPERATURES; NANO CHANNELS; NARROW CHANNEL; OUT-DIFFUSION; RECRYSTALLIZATIONS; SELECTIVE GROWTH; SI (001) SUBSTRATE; STRAIN-RELAXED; SURFACE HYDRIDES; THERMAL INSTABILITIES;

ACTIVATION ENERGY; ASTATINE; DIFFUSION BARRIERS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE DIFFUSION; THERMODYNAMIC STABILITY;

GERMANIUM;

EID: 78650869617 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3525982 Document Type: Article

Times cited : (17)

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