High performance ultrathin (110)-oriented ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by ge condensation technique

Applied Physics Express

Volumn 3, Issue 4, 2010, Pages

  Dissanayake, Sanjeewa ^a   Tomiyama, Kentaro ^a   Sugahara, Satoshi ^b   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; BACK GATES; CHANNEL DIRECTIONS; CONTROL DEVICE; DEVICE OPERATIONS; GE CONDENSATION; GE ON INSULATORS; HOLE TRANSPORTS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; P-MOSFETS; SI-ON-INSULATOR; ULTRA-THIN;

CONDENSATION; CONTROL; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GERMANIUM; ION BEAMS; MOS DEVICES; MOSFET DEVICES; TRANSPORT PROPERTIES;

HOLE MOBILITY;

EID: 77950639121     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.041302     Document Type: Article

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