New approach to form EOT-scalable gate stack with strontium germanide interlayer for high-k/Ge MISFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 78-79

  Kamata, Yoshiki ^a   Takashima, Akira ^a   Kamimuta, Yuuichi ^a   Tezuka, Tsutomu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; GERMANIDES; NEW APPROACHES; THERMALLY UNSTABLE;

GERMANIUM; HOLE MOBILITY; LOGIC GATES; STRONTIUM;

MISFET DEVICES;

EID: 71049179902     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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