GeOI pMOSFETs scaled down to 30-nm gate length with record off-state current

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 234-236

  Hutin, Louis ^a   Le Royer, Cyrille ^a   Damlencourt, Jean François ^a   Hartmann, Jean Michel ^a   Grampeix, Helen ^a   Mazzocchi, Vincent ^a   Tabone, Claude ^a   Previtali, Bernard ^a   Pouydebasque, Arnaud ^a   Vinet, Maud ^a   Faynot, Olivier ^a  

^a CEA GRENOBLE   (France)

Author keywords

Ge enrichment; Germanium; Germanium on insulator (GeOI); MOSFET

Indexed keywords

CHANNEL DEVICE; CHANNEL TRANSISTORS; DEFECTIVITY; FABRICATION PROCESS; GATE LENGTH; GE FILMS; GERMANIUM-ON-INSULATOR; GERMANIUM-ON-INSULATOR (GEOI); MOS-FET; OFF-STATE CURRENT; OFF-STATE LEAKAGE; P-MOSFETS; SHORT-CHANNEL EFFECT; ULTRA-THIN;

MOSFET DEVICES;

GERMANIUM;

EID: 77649189043     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2038289     Document Type: Article

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