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Volumn 157, Issue 2, 2010, Pages

Extended-defect aspects of Ge-on-Si materials and devices

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; MINIMUM DENSITY; PROCESSING CONDITION; THERMAL BUDGET; THERMODYNAMIC MODEL; THIN EPITAXIAL LAYER; THREADING DISLOCATION;

EID: 73849107375     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3267514     Document Type: Article
Times cited : (14)

References (60)
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