Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 342-347

  Maikap, S ^a   Lee, M H ^b   Chang, S T ^c   Liu, C W ^d  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; MOS DEVICES; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

COMPRESSIVE STRAIN; ELECTRON MOBILITY ENHANCEMENT FACTORS; HOLE CONFINEMENT SHOULDER; INTERFACE TRAP CHARGE DENSITY;

GERMANIUM;

EID: 34047225367     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/008     Document Type: Article

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