Ga-implantation in Ge: Electrical activation and clustering

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Impellizzeri, G ^a   Mirabella, S ^a   Irrera, A ^a   Grimaldi, M G ^a   Napolitani, E ^b  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CONCENTRATION OF; CONCENTRATION RANGES; CONCENTRATION REDUCTION; CRYSTALLINE GE; DOPANT LOSS; ELECTRICAL ACTIVATION; ELECTRICAL CHARACTERIZATION; FLUENCE; FUTURE GENERATIONS; GA DIFFUSION; RECRYSTALLIZED SAMPLES; ROOM TEMPERATURE; SCATTERING CENTERS; SECONDARY IONS; SIMPLE MODEL; TEMPERATURE RANGE; THERMAL-ANNEALING; THERMALLY ACTIVATED;

ANNEALING; BIOACTIVITY; CONCENTRATION (PROCESS); ELECTRIC RESISTANCE; GERMANIUM; HALL EFFECT; HOLE MOBILITY; HONEYCOMB STRUCTURES; IONS; MAGNETIC FIELD EFFECTS; SECONDARY ION MASS SPECTROMETRY;

HOLE CONCENTRATION;

EID: 67650742264     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159031     Document Type: Article

References (28)

1. C. Claeys and E. Simoen, Germanium-Based Technologies-From Materials to Devices (Elsevier, Amsterdam, 2007).
2. S. M. Sze and J. C. Irvin, Solid-State Electron. 0038-1101 11, 599 (1968). 10.1016/0038-1101(68)90012-9
3. W. C. Dunlap, Jr., Phys. Rev. 0096-8250 94, 1531 (1954). 10.1103/PhysRev.94.1531
4. S. Uppal, A. F. W. Willoughby, J. M. Bonar, A. G. R. Evans, N. E. B. Cowern, R. Morris, and M. G. Dowsett, J. Appl. Phys. 0021-8979 90, 4293 (2001). 10.1063/1.1402664
5. S. Uppal, A. F. W. Willoughby, J. M. Bonar, N. E. B. Cowern, T. Grasby, R. J. H. Morris, and M. G. Dowsett, J. Appl. Phys. 0021-8979 96, 1376 (2004). 10.1063/1.1766090
6. Y. -L. Chao, S. Prussin, J. C. S. Woo, and R. Scholz, Appl. Phys. Lett. 0003-6951 87, 142102 (2005). 10.1063/1.2076440
7. A. Satta, E. Simoen, T. Clarisse, T. Janssens, A. Benedetti, B. De Jaeger, M. Meuris, and W. Vandervorst, Appl. Phys. Lett. 0003-6951 87, 172109 (2005). 10.1063/1.2117631
8. Y. S. Suh, M. S. Carroll, R. A. Levy, G. Bisognin, D. De Salvador, M. A. Sahiner, and C. A. King, IEEE Trans. Electron Devices 0018-9383 52, 2416 (2005). 10.1109/TED.2005.857183
9. S. Mirabella, G. Impellizzeri, A. M. Piro, E. Bruno, and M. G. Grimaldi, Appl. Phys. Lett. 0003-6951 92, 251909 (2008). 10.1063/1.2949088
10. G. Impellizzeri, S. Mirabella, E. Bruno, A. M. Piro, and M. G. Grimaldi, J. Appl. Phys. 0021-8979 105, 063533 (2009). 10.1063/1.3091289
11. I. H. Wilson, J. Appl. Phys. 0021-8979 53, 1698 (1982). 10.1063/1.331636
12. O. W. Holland, B. R. Appleton, and J. Narayan, J. Appl. Phys. 0021-8979 54, 2295 (1983). 10.1063/1.332385
13. H. Huber, W. Assmann, S. A. Karamian, A. Mücklich, W. Prusseit, E. Gazis, G. Grötzschel, M. Kokkoris, E. Kossionidis, H. D. Mieskes, and R. Vlastou, Nucl. Instrum. Methods Phys. Res. B 0168-583X 122, 542 (1997). 10.1016/S0168-583X(96)00568-X
14. B. Stritzker, R. G. Elliman, and J. Zou, Nucl. Instrum. Methods Phys. Res. B 0168-583X 175-177, 193 (2001). 10.1016/S0168-583X(00)00597-8
15. T. Janssens, C. Huyghebaert, D. Vanhaeren, G. Winderickx, A. Satta, M. Meuris, and W. Vandervorst, J. Vac. Sci. Technol. B 1071-1023 24, 510 (2006). 10.1116/1.2151904
16. L. Ottaviano, A. Verna, V. Grossi, P. Parisse, S. Piperno, M. Passacantando, G. Impellizzeri, and F. Priolo, Surf. Sci. 0039-6028 601, 2623 (2007). 10.1016/j.susc.2006.11.075
17. S. Koffel, P. Scheiblin, A. Claverie, and G. Benassayag, J. Appl. Phys. 0021-8979 105, 013528 (2009). 10.1063/1.3041653
18. U. Södervall, H. Odelius, A. Lodding, U. Roll, B. Predel, W. Gust, and P. Dorner, Philos. Mag. A 0141-8610 54, 539 (1986). 10.1080/ 01418618608243611
19. M. Friesel, U. Södervall, and W. Gust, J. Appl. Phys. 0021-8979 78, 5351 (1995). 10.1063/1.359714
20. I. Riihimäki, A. Virtanen, S. Rinta-Anttila, P. Pusa, J. Räisänen, and The ISOLDE Collaboration, Appl. Phys. Lett. 0003-6951 91, 091922 (2007). 10.1063/1.2778540
21. V. I. Fistul, Impurities in Semiconductors: Solubility, Migration, and Interactions (CRC, Boca Raton, FL, 2004), p. 164.
22. E. Simoen, A. Satta, A. D'Amore, T. Janssens, T. Clarysse, K. Martens, B. De Jaeger, A. Benedetti, I. Hoflijk, B. Brijs, M. Meuris, and W. Vandervorst, Mater. Sci. Semicond. Process. 1369-8001 9, 634 (2006). 10.1016/j.mssp.2006.08. 067
23. A. Satta, E. Simoen, T. Janssens, T. Clarisse, B. De Jaeger, A. Benedetti, I. Hoflijk, B. Brijs, M. Meuris, and W. Vandervorst, J. Electrochem. Soc. 0013-4651 153, G229 (2006). 10.1149/1.2162469
24. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Stopping and Ranges of Ions in Matter Vol. 1 (Pergamon, New York, 1984), see: http://www.srim.org.
25. C. Jasper, L. Rubin, C. Lindfors, K. S. Jones, and J. Oh, Proceedings of Ion Implantation Technique (IEEE, New York, 2002), p. 548.
26. R. Lindsay, K. Henson, W. Vandervorst, K. Maex, B. J. Pawlak, R. Duffy, R. Surdeanu, P. Stolk, J. A. Kittl, S. Giangrandi, X. Pages, and K. Van der Jeugd, J. Vac. Sci. Technol. B 1071-1023 22, 306 (2004). 10.1116/1.1638774
27. G. Masetti, M. Severi, and S. Solmi, IEEE Trans. Electron Devices 0018-9383 30, 764 (1983). 10.1109/T-ED.1983.21207
28. O. A. Golikova, B. Y. Moizhez, and L. S. Stilbans, Sov. Phys. Solid State 0038-5654 3, 10 (1962).