SOI-GeOI hybrid substrates elaboration by Ge condensation: Process and electrical properties

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2008, Pages 103-104

  Nguyen, Q T ^a   Damlencourt, J F ^b   Vincent, B ^b   Loup, V ^b   Le Cunff, Y ^b   Gentil, P ^a   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MOBILITY; GERMANIUM; HOLE MOBILITY; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRICAL PROPERTIES; GE ISLANDS; GEOI WAFERS; HIGH ELECTRON MOBILITIES; HYBRID SUBSTRATES;

SILICON WAFERS;

EID: 57749193974     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2008.4656315     Document Type: Conference Paper

References (5)

1. T. Tezuka et al., Appl. Phys. Lett. 79, 1798, 2001.
2. Q.T. Nguyen et al., Sol-Stat Elect 51,1172, 2007.
3. T. Akatsu et al., IEEE Int. SOI Conf., p. 138, 2005.
4. S. Cristoloveanu et al., IEEE T.E.D. 47, pp.1018-27, 2000.
5. J-F. Damlencourt et al., ECS Trans. 6, p. 65, 2007.