Selective epitaxial growth of germanium on Si wafers with shallow trench isolation: An approach for Ge virtual substrates

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 829-836

  Wang, G ^a,b   Leys, F E ^a   Souriau, L ^a,b   Loo, R ^a   Caymax, M ^a   Brunco, D P ^a   Geypen, J ^a   Bender, H ^a   Meuris, M ^a   Vandervorst, W ^a,b   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; SILICON WAFERS;

ELECTRICAL ISOLATION; MASS TRANSPORT MODEL; SELECTIVE EPITAXIAL GROWTH; SHALLOW TRENCH ISOLATION; SHALLOW-TRENCH-ISOLATED; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; VIRTUAL SUBSTRATES;

SI-GE ALLOYS;

EID: 59449099840     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986842     Document Type: Conference Paper

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