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Volumn 106, Issue 10, 2009, Pages

Radical oxidation of germanium for interface gate dielectric GeO 2 formation in metal-insulator-semiconductor gate stack

(9) Kobayashi, Masaharu a Thareja, Gaurav a Ishibashi, Masato a Sun, Yun b Griffin, Peter a McVittie, Jim a Pianetta, Piero b Saraswat, Krishna a Nishi, Yoshio a

a Stanford University (United States)

b SLAC NATIONAL ACCELERATOR LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; ELECTRICAL PROPERTY; GATE LEAKAGES; GATE STACKS; HIGH DENSITY; INTERFACE STATE DENSITY; INTERFACIAL LAYER; METAL OXIDE SEMICONDUCTOR; METAL-INSULATOR-SEMICONDUCTORS; OXIDATION ACTIVATION ENERGY; OXIDATION KINETICS; RADICAL OXIDATION; REACTIVE OXYGEN; SUBSTRATE ORIENTATION; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; THREE-DIMENSIONAL STRUCTURE; VALENCE BAND OFFSETS;

ACTIVATION ENERGY; ALUMINA; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GERMANIUM; LOGIC GATES; METAL INSULATOR BOUNDARIES; MIS DEVICES; MOS CAPACITORS; OXIDATION; OXYGEN; SEMICONDUCTOR GROWTH; SYNCHROTRON RADIATION;

GATE DIELECTRICS;

EID: 71749083157 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3259407 Document Type: Article

Times cited : (91)

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