Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation

Semiconductor Science and Technology

Volumn 24, Issue 4, 2009, Pages

  Hu, Vita Pi Ho ^a   Wu, Yu Sheng ^a   Su, Pin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL SOLUTIONS; BACK-GATE BIAS; BURIED OXIDE THICKNESS; CHANNEL LENGTH; CHANNEL THICKNESS; ELECTROSTATIC INTEGRITY; MOS-FET; MOSFETS; POISSON'S EQUATION; SUBTHRESHOLD SWING; TCAD SIMULATION; ULTRA-THIN-BODY;

ELECTROSTATIC DEVICES; ELECTROSTATICS; MOSFET DEVICES; POISSON DISTRIBUTION; QUALITY ASSURANCE;

POISSON EQUATION;

EID: 68949108146     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/4/045017     Document Type: Article

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