CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 60-61

  Yokoyama, M ^a   Kim, S H ^a   Zhang, R ^a   Taoka, N ^a   Urabe, Y ^b   Maeda, T ^b   Takagi, H ^b   Yasuda, T ^b   Yamada, H ^c   Ichikawa, O ^c   Fukuhara, N ^c   Hata, M ^c   Sugiyama, M ^a   Nakano, Y ^a   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATION; DIRECT WAFER BONDING; FORMATION PROCESS; GE PMOSFET; GE SUBSTRATES; METAL SOURCE/DRAIN; MOBILITY ENHANCEMENT; NMOSFET; NMOSFETS; P-MOSFETS; SELF-ALIGN; SINGLE-STEP;

ELECTRIC BREAKDOWN; GERMANIUM; HOLE MOBILITY; MOSFET DEVICES; SEMICONDUCTING INDIUM; SILICON WAFERS;

WAFER BONDING;

EID: 80052674100     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. S. Takagi, et al., SSE, vol. 51, pp. 526-536, 2007.
2. M. Yokoyama, et al, VLSI Symp. (2009) pp. 242.
3. M. Yokoyama, et al, VLSI Symp. (2010) pp. 235.
4. M. Yokoyama, et al., IEDM, 3.1 (2010) pp. 46.
5. R. Zhang, et al., SISC, 6.3 (2010).
6. S. H. Kim, et al., IEDM, 26.6 (2010) pp. 596.
7. N. Taoka, et al., VLSI Symp. (2009), pp. 80.