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Applied Physics Letters

Volumn 95, Issue 26, 2009, Pages

Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge

(4) Vincent, B a Vandervorst, W a,b Caymax, M a Loo, R a

a IMEC (Belgium)

b KU LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER GAS; GE SUBSTRATES; GE-SEGREGATION; IN-BETWEEN; LOW ENERGIES; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROSCOPY; SI INCORPORATION MECHANISM; ULTRA-THIN;

CHEMICAL VAPOR DEPOSITION; MONOLAYERS; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SILICON;

GERMANIUM;

EID: 73649102784 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3280075 Document Type: Article

Times cited : (17)

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