Biaxial and uniaxial compressive stress implemented in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments

ECS Transactions

Volumn 41, Issue 7, 2011, Pages 239-248

  Vincent, B ^a   Gencarelli, F ^a,b   Lin, D ^a   Nyns, L ^a   Richard, O ^a   Bender, H ^a   Douhard, B ^a   Moussa, A ^a   Merckling, C ^a   Witters, L ^a   Vandervorst, W ^a,b   Loo, R ^a   Caymax, M ^a   Heyns, M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM WELLS; TIN ALLOYS;

ADVANCED ARCHITECTURE; CHEMICAL VAPOR; PMOSFET; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; RELAXED BUFFER; SHALLOW TRENCH ISOLATION; STRAINED-GE; UNIAXIAL COMPRESSIVE;

SI-GE ALLOYS;

EID: 84857289807     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633304     Document Type: Conference Paper

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