High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate

Solid-State Electronics

Volumn 53, Issue 7, 2009, Pages 723-729

  Romanjek, K ^a   Hutin, L ^a   Le Royer, C ^a   Pouydebasque, A ^a   Jaud, M A ^a   Tabone, C ^a   Augendre, E ^a   Sanchez, L ^a   Hartmann, J M ^a   Grampeix, H ^a   Mazzocchi, V ^a   Soliveres, S ^a   Truche, R ^a   Clavelier, L ^a   Scheiblin, P ^a   Garros, X ^a   Reimbold, G ^a   Vinet, M ^a   Boulanger, F ^a   Deleonibus, S ^a  

^a CEA LETI   (France)

Author keywords

GeOI; Germanium; Germanium on insulator; High k; Hole mobility; MOSFET; Short channel effects

Indexed keywords

GEOI; GERMANIUM-ON-INSULATOR; HIGH-K; MOSFET; SHORT CHANNEL EFFECTS;

FIELD EFFECT TRANSISTORS; GERMANIUM; HOLE MOBILITY; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 67349148979     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.01.021     Document Type: Article

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