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Volumn 47, Issue 4 PART 2, 2008, Pages 2656-2659
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Combined effects of an epitaxial Ge channel and Si substrate on Ge-on-Si metal-oxide-semiconductor capacitors and field effect transistors
a
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Author keywords
Ge epitaxy; High k gate dielectric; MOS capacitors; MOSFETs
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Indexed keywords
CAPACITANCE;
CAPACITORS;
CARRIER CONCENTRATION;
CONCENTRATION (PROCESS);
CRYSTAL GROWTH;
CRYSTALLOGRAPHY;
DIELECTRIC DEVICES;
ELECTRIC CONDUCTIVITY;
ELECTRIC EQUIPMENT;
EPITAXIAL LAYERS;
FIELD EFFECT TRANSISTORS;
GATE DIELECTRICS;
GATES (TRANSISTOR);
GERMANIUM;
MOLECULAR BEAM EPITAXY;
MOS CAPACITORS;
MOSFET DEVICES;
NUMERICAL ANALYSIS;
OPTICAL ENGINEERING;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR MATERIALS;
SILICON;
SOLIDS;
SUBSTRATES;
TRANSISTORS;
BANDGAP ENERGIES;
CAP LAYERS;
CAPACITANCE-VOLTAGE;
COMBINED EFFECTS;
ELECTRICAL CHARACTERISTICS;
EPITAXIAL LAYER THICKNESSES;
FLAT BANDS;
FREQUENCY DISPERSIONS;
GE CHANNELS;
GE EPITAXY;
HETEROSTRUCTURES;
HIGH-K GATE DIELECTRIC;
LAYER STRUCTURES;
LOW FREQUENCY BEHAVIORS;
MATERIAL PARAMETERS;
MOSFETS;
SEMICONDUCTOR CAPACITORS;
SI DEVICES;
SI SUBSTRATES;
SEMICONDUCTING SILICON;
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EID: 54349126251
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.2656 Document Type: Article |
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Times cited : (4)
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References (14)
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