Study of ohmic contacts to n-type Ge: Snowplow and laser activation

Applied Physics Letters

Volumn 99, Issue 24, 2011, Pages

  Firrincieli, A ^a,b   Martens, K ^a,b   Rooyackers, R ^a   Vincent, B ^a   Rosseel, E ^a   Simoen, E ^a   Geypen, J ^a   Bender, H ^a   Claeys, C ^a,b   Kittl, J A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CIRCULAR TRANSFER LENGTH METHODS; CONTACT RESISTIVITIES; DOPANT ACTIVATION; DOPANT CONCENTRATIONS; DOPANT SEGREGATION; FERMI LEVEL PINNING; GERMANIDATION; LOW RESISTIVITY; N-TYPE GE; SPECIFIC CONTACT RESISTIVITY; SUB-MELT LASER ANNEAL; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION; THERMALLY STABLE; UNDERLYING CAUSE;

ELECTRIC CONTACTORS; ION IMPLANTATION; OHMIC CONTACTS; SEMICONDUCTOR DOPING;

GERMANIUM;

EID: 83755195981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3666045     Document Type: Article

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