Systematic study of shallow junction formation on germanium substrates

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 347-350

  Hellings, Geert ^a,b,g   Rosseel, Erik ^a   Clarysse, Trudo ^a   Petersen, Dirch Hjorth ^c   Hansen, Ole ^c   Nielsen, Peter Folmer ^d   Simoen, Eddy ^a   Eneman, Geert ^a,b,e   De Jaeger, Brice ^a   Hoffmann, Thomas ^a   De Meyer, Kristin ^a,b   Vandervorst, Wilfried ^a,f  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^d Capres AS   (Denmark)

^e RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^f KU LEUVEN   (Belgium)

^g Institute for the Promotion of Innovation By Science and Technology in Flanders   (Belgium)

Author keywords

Arsenic; Boron; Germanium; Mobility; Sheet Resistance; Ultra Shallow Junction

Indexed keywords

ELECTRICAL ACTIVATION; GERMANIUM SUBSTRATES; JUNCTION PROPERTIES; MOBILITY; NEW RESULTS; SHALLOW JUNCTION; SYSTEMATIC STUDY; ULTRA SHALLOW JUNCTION;

ARSENIC; BORON; BORON COMPOUNDS; ELECTRIC RESISTANCE; SHEET RESISTANCE;

GERMANIUM;

EID: 79751532227     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.11.014     Document Type: Conference Paper

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