SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 12, 2009, Pages

Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique

(3) Yang, Haigui a Wang, Dong a Nakashima, Hiroshi a

a KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; ACCEPTOR LEVELS; BACK-GATE; ENERGY SHIFT; GE CONDENSATION; NON-DOPED; SIGE-ON-INSULATOR SUBSTRATES; TEMPERATURE DEPENDENCE;

CONDENSATION; FIELD EFFECT TRANSISTORS; HALL EFFECT; HOLE CONCENTRATION; MAGNETIC FIELD EFFECTS; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ALLOYS; SUBSTRATES;

GERMANIUM;

EID: 70349661883 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3234373 Document Type: Article

Times cited : (32)

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