Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1330-1337

  Xie, Ruilong ^a,b   Phung, Thanh Hoa ^a   He, Wei ^a   Yu, Mingbin ^b   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Fluorine (F); Germanium (Ge); HfO2; High gate dielectrics; Interface traps; Metal oxide semiconductor field effect transistor (MOSFET); MOS devices; Passivation

Indexed keywords

BAND GAPS; C-V CHARACTERISTIC; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHANNEL LENGTH; EQUIVALENT OXIDE THICKNESS; FLAT VOLTAGE; FREQUENCY-DEPENDENT; GATE LEAKAGE CURRENT DENSITY; GATE STACKS; GE MOSFET; HFO2; HIGH MOBILITY; INTERFACE ENGINEERING; INTERFACE PROPERTY; INTERFACE TRAPS; METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET); METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MINIMUM DENSITY; P-MOSFETS;

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM COMPOUNDS; HOLE MOBILITY; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING GERMANIUM;

MOS CAPACITORS;

EID: 67049116017     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2019420     Document Type: Article

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