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Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators

(4) Zhang, Yan a Fischetti, M V a Soree B b O'Regan, T c

a University of Massachusetts (United States)

b IMEC (Belgium)

c UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY SCATTERING; BENEFICIAL EFFECTS; BIAXIAL STRAINS; BIAXIAL TENSILE STRESS; CHANNEL INVERSION; DIELECTRIC SCREENING; EXPERIMENTAL DATA; GAAS; II-IV SEMICONDUCTORS; KUBO-GREENWOOD FORMALISM; MOBILITY ENHANCEMENT; NON-POLAR; OPTICAL PHONONS; PERTURBATION THEORY; SELF-CONSISTENT METHOD; STRAINED-GE; SURFACE ROUGHNESS SCATTERING; THEORETICAL RESULT;

GALLIUM ALLOYS; GALLIUM ARSENIDE; HAFNIUM COMPOUNDS; INDIUM ANTIMONIDES; PERTURBATION TECHNIQUES; PHONON SCATTERING; PHONONS; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SURFACE ROUGHNESS; TENSILE STRESS;

HOLE MOBILITY;

EID: 78650900715 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3524569 Document Type: Article

Times cited : (19)

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