Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: Review of possible defects impacting the hole mobility

ECS Transactions

Volumn 28, Issue 2, 2010, Pages 157-169

  Mitard, J ^a   Vincent, B ^a   De Jaeger, B ^a   Krom, R ^b   Loo, R ^a   Eneman, G ^c   DeMeyer, K ^b   Meuris, M ^a   Heyns, M M ^a   Vandervorst, W ^d   Caymax, M ^a   Hoffmann, T ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^d KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; GATE DIELECTRICS; GERMANIUM; HAFNIUM OXIDES; HOLE MOBILITY; LOW TEMPERATURE EFFECTS; POINT DEFECTS; SILANES; SILICA; TEMPERATURE; TEMPERATURE MEASUREMENT;

COULOMB SCATTERING; DEVICE PERFORMANCE; ELECTRICAL CHARACTERIZATION; GATE STACKS; GE PMOSFET; LOW-TEMPERATURE MEASUREMENTS; METAL GATE; MOBILITY CONTROL;

SILICON;

EID: 78650535902     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3372572     Document Type: Conference Paper

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