Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 172-177

  Terzieva, V ^a   Souriau, L ^a,b   Caymax, M ^a   Brunco, D P ^a   Moussa, A ^a   Van Elshocht, S ^a   Loo, R ^a   Clemente, F ^a,b   Satta, A ^a   Meuris, Marc ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Germanium epitaxy; Strain; Threading dislocations; X ray diffraction

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIFFRACTIVE OPTICAL ELEMENTS; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL FILMS; EPITAXIAL LAYERS; GERMANIUM; LEAKAGE CURRENTS; SILICON; TIME DIVISION MULTIPLEXING;

ANNEALING TIMES; CRYSTALLINE QUALITIES; DEVICE PERFORMANCES; DIODE STRUCTURES; DOMINANT FACTORS; GE FILMS; HIGH-TEMPERATURE; LEAKAGE CURRENT MEASUREMENTS; MAGNITUDE REDUCTIONS; NITROGEN ANNEALING; SI SUBSTRATES; SIDE EFFECTS; THREADING DISLOCATIONS; X-RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54849421732     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.144     Document Type: Article

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