Impact of Epi-Si growth temperature on Ge-pFET performance

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 411-414

  Mitard, J ^a,b   Martens, K ^a   DeJaeger, B ^a   Franco, J ^a,b   Shea, C ^c   Plourde, C ^c   Leys, F E ^a   Loo, R ^a   Hellings, G ^a,b,g   Eneman, G ^a,b,f   Wang, Wei E ^d   Lin, J C ^e   Kaczer, B ^a   DeMeyer, K ^a   Hoffmann, T ^a   DeGendt, S ^a   Caymax, M ^a   Meuris, M ^a   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^d Intel c o IMEC   (Belgium)

^e TSMC c/o IMEC   (Belgium)

^f RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^g IWT ^*  (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; EPITAXIAL SILICON; SILICON GROWTH;

GERMANIUM; GROWTH TEMPERATURE; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72849118850     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331351     Document Type: Conference Paper

References (16)

1. Chau et aI., Proceedings CS MANTEC, April 2008 , Chicago, USA.
2. Mitard et al., Technical Digest, IEDM, p.873, San Francisco,2008
3. Mitard et al., VLSI Symposium, Kyoto, Japan, 2009.
4. Brunco et al., Journal of The Electrochemical Society, 155 (7), 2008.
5. Martens et al., ESSDERC proceedings, p.138, Edinburg, UK, 2008.
6. Taoka et al., Applied Physics Letters, 92, 113511, 2008
7. Leys et al., Materials Science in SC Processing, 9, 679, E-MRS,2006
8. Caymax et al., invited paper, ECS Spring, 2009.
9. Zimmerman et al., Technical Digest, IEDM, p.655, 2006
10. Ghibaudo et al., lEE Electronics Letters, vol.24, pp.543, Apr. 1988.
11. Takagi et al., IEEE TED, vol. 41, no. 12, pp. 2357,1994.
12. Fischetti et aI, J. Appl. Phys., vol. 90, no. 9, pp. 4587-4608, Nov. 2001.
13. Martens et al., IEEE TED, Vol. 55, no. 2, 2008
14. Lee et al., Journal of Applied Physics , AP Review, 97, 011101, 2005.
15. Houssa et al., 212th ECS Meeting, Washington, October 7-12, 2007.
16. Kaczer et al., accepted and presented to INFOS, 2009.