SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 39-40

  Oh, J ^a   Lee, S H ^b   Min, K S ^a   Huang, J ^a   Min, B G ^a   Sassman, B ^a   Jeon, K ^c   Loh, W Y ^a   Barnett, J ^a   Ok, I ^a   Kang, C Y ^a   Smith, C ^a   Ko, D H ^d   Kirsch, P D ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DIRECTIONS; CHANNEL ORIENTATIONS; CHANNEL STRAIN; COMPREHENSIVE STUDIES; HIGH MOBILITY; HYBRID CHANNELS; INTEGRATION TECHNIQUES; PROCESS COMPLEXITY; SI(110); SIGE CHANNELS; SURFACE ORIENTATION; UNI-AXIAL STRAINS;

ELECTRON MOBILITY; SILICON ALLOYS;

HOLE MOBILITY;

EID: 77957875412     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556127     Document Type: Conference Paper

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