Strained Si, SiGe, and Ge channels for high-mobility metal-oxide- semiconductor field-effect transistors

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Lee, Minjoo L ^a   Fitzgerald, Eugene A ^a   Bulsara, Mayank T ^b   Currie, Matthew T ^b   Lochtefeld, Anthony ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b AmberWave Systems Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; DOPING DENSITY; THREADING DISLOCATION;

DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; GERMANIUM; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROSTRUCTURE; RELAXATION PROCESSES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; SILICON COMPOUNDS;

MOSFET DEVICES;

EID: 19944433396     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1819976     Document Type: Review

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