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Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions

(5) Yang, R a Eneman, G a,b Wang, G a,b Claeys, C a,b Simoen, E a

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; C-V CHARACTERISTIC; CAPACITANCE VOLTAGE; CONDUCTION BAND EDGE; DEEP LEVEL; ELECTRICAL PROPERTY; ELECTRICALLY ACTIVE DEFECTS; EXTENDED DEFECT; FREE CARRIER DENSITY; FREQUENCY DISPERSION; HETERO INTERFACES; HIGH DENSITY; HIGH FREQUENCY; HIGH-TEMPERATURE ANNEALING; LOWER DENSITY; SHALLOW TRENCH ISOLATION; SI LAYER; THICK EPITAXIAL; THREADING DISLOCATION;

CAPACITANCE; DEFECT DENSITY; DEFECTS; DISPERSIONS; ELECTRON MOBILITY; EPITAXIAL LAYERS; GERMANIUM; SEMICONDUCTING SILICON; SILICON WAFERS; SPEECH ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350110481 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3238285 Document Type: Article

Times cited : (10)

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