SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 35, Issue 3, 2011, Pages 279-298

Prospective and critical issues of III-V/Ge CMOS on Si platform

(2) Takagi, S a Takenaka, M a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CRITICAL ISSUES; FUNCTIONAL DEVICES; GATE STACKS; GE CONDENSATION; HETEROGENEOUS INTEGRATION; INTERFACE PROPERTY; INTERFACIAL PROPERTY; MOS INTERFACE; MOSFETS; POSSIBLE SOLUTIONS; POTENTIAL SOLUTIONS; SCALED CMOS; SI SUBSTRATES; SPEED LOGIC; SURFACE NITRIDATION; SURFACE ORIENTATION; ULTRA-THIN; ULTRATHIN BODY; WAFER BONDING TECHNIQUES;

GERMANIUM; GERMANIUM OXIDES; GRAPHENE; MOSFET DEVICES; NANOWIRES; SEMICONDUCTING INDIUM; SILICON; SILICON WAFERS; WAFER BONDING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960761017 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3569921 Document Type: Conference Paper

Times cited : (31)

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