Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Sawano, K ^a   Satoh, H ^a   Kunishi, Y ^a   Nakagawa, K ^b   Shiraki, Y ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPRESSIVE STRENGTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN RELAXATION;

BACKGATING MEASUREMENTS; CHANNEL MODULATION; SCREENING EFFECT;

CARRIER CONCENTRATION;

EID: 34247255385     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S38     Document Type: Article

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