Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 823-828

  Yu, Hyun Yong ^a   Park, Jin Hong ^a   Okyay, Ali K ^a,b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; HYDROGEN; MORPHOLOGY; SILICON; SURFACE MORPHOLOGY;

CAPACITOR STRUCTURES; DEFECT REDUCTION; DISLOCATION DENSITIES; HYDROGEN ANNEALING; IN-SITU DOPING; MONOLITHIC INTEGRATION; SELECTIVE DEPOSITION; SELECTIVE EPITAXY;

SI-GE ALLOYS;

EID: 63149178466     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986841     Document Type: Conference Paper

References (6)

1. M. Lee, C.W.Leitz, Z. Cheng, A. J. Pitera, T. Langdo, M. T. Currie, G. Taraschi, E.A. Fitzgerald, and D. A. Antoniadis, Appl. Phys. Lett. 79, 3344 (2001).
2. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntryre, and K. C. Saraswat. Tech. Dig. Int. Electron Device Meet. 2001, 437.
3. E. A. Fitzgerald, Y. H. Xie, D. Monroe, P. J. Silverman, J. M. Kuo, A. R. Kortan, F. A. Thiel, and B. E. Weir, J. Vac, Sci, Technol. B 10, 1807 (1992).
4. S. Kobayashi, M. Cheng, A. Kohlhase, T. Sato, J. Murota and N. Mikoshiba, Journal of Crystal Growth Vol.99 pp.259-262 (1990)
5. T. Egawa, A. Sakai, T. Yamamoto, N.Taoka, O. Nakatsuka, S. Zaima, and Y. Yasuda, Appl. Surfac Science 224, 104(2004)
6. A. Nayfeh, C. O. Chui, and K. C. Saraswat, Appl. Phys. Lett. 85, 2815 (2004)