High-mobility Ge pMOSFET With 1-nm EOT Al 2O 3GeO xGe gate stack fabricated by plasma post oxidation

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 335-341

  Zhang, Rui ^a   Iwasaki, Takashi ^a   Taoka, Noriyuki ^a   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Equivalent oxide thickness (EOT); germanium; metal oxide semiconductor field effect transistor (MOSFET); mobility

Indexed keywords

EQUIVALENT OXIDE THICKNESS; GATE STACKS; GE PMOSFET; GE SUBSTRATES; HIGH MOBILITY; INTERFACE STATE DENSITY; INTERFACIAL-LAYER THICKNESS; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR INTERFACES; MOBILITY VALUE; MOS INTERFACE; P-MOSFETS; POST-OXIDATION; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; ULTRA-THIN; UNIVERSAL RELATIONSHIP;

ALUMINUM; CARRIER MOBILITY; DIELECTRIC DEVICES; HOLE MOBILITY; LOGIC GATES; MOSFET DEVICES; TRANSISTORS;

GERMANIUM;

EID: 84856277686     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2176495     Document Type: Article

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