High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 441-444

  Shang, Huiling ^a   Okorn Schmidt, Harald ^a   Chan, Kevin K ^a   Copel, Matthew ^a   Ott, John A ^a   Kozlowski, P M ^a   Steen, S E ^a   Cordes, S A ^a   Wong, H S P ^a   Jones, E C ^a   Haensch, W E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); HOLE MOBILITY; SEMICONDUCTING GERMANIUM; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0036932194     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. K. Rim et al, "Strained Si NMOSFETs for high performance CMOS technology", 2001 Symposium on VLSI Technology, 2001 p.59
2. K. Rim et al, "Characteristics and device design of sub-100nm strained Si N- and PMOSFETs", 2002 symposium on VLSI Technology, 2002 p. 12
3. 0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition", Appl. Phys. Lett. Vol.76, No.26, 2000, p.3920
4. D. Rein King et al. "CMOS compatible germanium p-MOSFETson Si substrates", Proc. ESSDERC, 1999, p.300
5. x/Si virtual substrates", Appl. Phys. Lett. Vol.79, No 20. 2001
6. C. Chui, et al. "Ultrathin high-K, gate dielectric technology for germanium MOS applications", IEEE 60th DRC Tech. Dig., p. 191, Jun 2002
7. T. Jackson et al., "gate-self-aligned p-channel germanium MISFET's", IEEE EDL, Vol.12, no. 11, 1991, p. 605
8. S.M. Sze, Physics of Semiconductor Device, p. 850