Influence of strained Si1-yGey layer thickness and composition on hole mobility enhancement in heterostructure p-MOSFETs with Ge contents y from 0.7 to 1.0

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 963-972

  Chléirigh, C Ní ^a   Olubuyide, O O ^a   Hoyt, J L ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRON TUNNELING; HETEROJUNCTIONS; HOLE MOBILITY; LEAKAGE CURRENTS; OPTIMIZATION; SEMICONDUCTING GERMANIUM;

BAND-TO-BAND TUNNELING; HOLE MOBILITY ENHANCEMENT; STRAINED HETEROSTRUCTURES; TEMPERATURE DEPENDENT MEASUREMENTS;

MOSFET DEVICES;

EID: 33846975471     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355890     Document Type: Conference Paper

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