Opportunities and challenges for germanium and silicon-germanium channel p-FETs

ECS Transactions

Volumn 19, Issue 1, 2009, Pages 155-164

  Bedell, S W ^a   Daval, N ^a   Fogel, K ^a   Shimizu, K ^b   Ott, J ^a   Newbury, J ^a   Sadana, D K ^a  

^a IBM RESEARCH   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ENERGY GAP; GATE DIELECTRICS; GERMANIUM; HIGH TEMPERATURE ENGINEERING; HIGH-K DIELECTRIC; LOGIC GATES; SILICON; THRESHOLD VOLTAGE;

BAND GAP ENGINEERING; ELECTRICAL BEHAVIORS; EXTERNAL RESISTANCE; HIGH-K/METAL GATES; LOWER TEMPERATURES; OFF-STATE LEAKAGE; SHORT CHANNELS; SILICON GERMANIUM;

SI-GE ALLOYS;

EID: 74949138752     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3118941     Document Type: Conference Paper

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