GeSn technology: Impact of Sn on Ge CMOS applications

ECS Transactions

Volumn 41, Issue 7, 2011, Pages 231-238

  Zaima, S ^a   Nakatsuka, O ^a   Shimura, Y ^a,b   Adachi, M ^a   Nakamura, M ^a   Takeuchi, S ^c   Vincent, B ^d   Gencarelli, F ^d   Clarysse, T ^d   Demeulemeester, J ^e   Temst, K ^e   Vantomme, A ^e   Caymax, M ^d   Loo, R ^d  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^c Covalent Silicon Co ^*  (Japan)

^d IMEC   (Belgium)

^e KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

CRYSTALLINE PROPERTIES; DOPING PROFILES; GA DOPING; HALL MEASUREMENTS; HETEROEPITAXIAL; SN CONTENTS;

TIN;

EID: 84857284238     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633303     Document Type: Conference Paper

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