Ge (100) and (111) N- and P-FETs with high mobility and low-T mobility characterization

IEEE Transactions on Electron Devices

Volumn 56, Issue 4, 2009, Pages 648-655

  Kuzum, Duygu ^a   Pethe, Abhijit J ^b   Krishnamohan, Tejas ^b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Germanium; Interface state density extraction; Mobility; MOSFET; Orientation; Scattering

Indexed keywords

BAND EDGES; BAND GAPS; CARRIER SCATTERINGS; COMPLETE MAPPINGS; CONDUCTANCE TECHNIQUES; GE(100); HIGH MOBILITIES; INTERFACE CHARACTERIZATIONS; INTERFACE STATE DENSITY EXTRACTION; INTERFACE TRAPS; LOW TEMPERATURES; MOBILITY; MOBILITY MEASUREMENTS; MOSFET; ORIENTATION; SUBSTRATE ORIENTATIONS; SURFACE ORIENTATIONS;

ELECTRON MOBILITY; ELECTRON SCATTERING; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; MESFET DEVICES; MOSFET DEVICES;

HOLE MOBILITY;

EID: 67349203553     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2014198     Document Type: Article

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