Impact of si-thickness on interface and device properties for si-passivated ge pMOSFETs

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 138-141

  Martens, Koen ^a,b   Mitard, Jerome ^a   De Jaeger, Brice ^a   Meuris, Marc ^a   Maes, Herman ^a,b   Groeseneken, Guido ^a,b   Minucci, Franco ^b,c   Crupi, Felice ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF CALABRIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THRESHOLD VOLTAGE;

CONDUCTANCE TECHNIQUES; DEVICE PROPERTIES; EPITAXIALLY GROWN; INTERFACE STATES; MOBILITY BEHAVIORS; SEMICONDUCTOR-DIELECTRIC INTERFACES;

PASSIVATION;

EID: 58149083108     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681718     Document Type: Conference Paper

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