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Volumn 109, Issue 3, 2011, Pages

Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

(5) Dissanayake, Sanjeewa a Zhao, Yi a Sugahara, S b Takenaka, Mitsuru a Takagi, Shinichi a

a UNIVERSITY OF TOKYO (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; CHANNEL DIRECTIONS; DOMINANT FACTOR; EFFECTIVE FIELD; EFFECTIVE MASS; GE CONDENSATION; GE ON INSULATORS; LOW-TEMPERATURE MEASUREMENTS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ANISOTROPY; P-MOSFETS; SI SURFACES; TEMPERATURE DEPENDENCIES;

CONDENSATION; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GERMANIUM; ION BEAMS; MOSFET DEVICES; PHONONS; TEMPERATURE MEASUREMENT;

HOLE MOBILITY;

EID: 79951846841 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3537919 Document Type: Article

Times cited : (57)

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