Scalable TaN metal source/drain & gate InGaAs/Ge n/pMOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 62-63

  Maeda, T ^a   Urabe, Y ^a   Itatani, T ^a   Ishii, H ^a   Miyata, N ^a   Yasuda, T ^a   Yamada, H ^b   Hata, M ^b   Yokoyama, M ^c   Takenaka, M ^c   Takagi, S ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS FABRICATION; DUAL CHANNEL; GATE STACKS; HIGH MOBILITY; METAL SOURCE/DRAIN; NMOSFETS; PMOS DEVICES;

GERMANIUM; SEMICONDUCTING INDIUM; TANTALUM COMPOUNDS;

METALS;

EID: 80052675861     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. D. Lin et al., IEDM Tech Dig., (2009) 327.
2. M. Radosavljevic et al., IEDM Tech Dig., (2010) 126.